HS1-65647RH-Q Datasheet (Intersil Corporation) - Radiation Hardened 8K x 8 SOS CMOS Static RAM

HS1-65647RH-Q, Radiation Hardened 8K x 8 SOS CMOS Static RAM

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM.

This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology.

This technology gives exceptional hardness to all types of radiation, including neutron ﬂuence, total ionizing dose, high in

HS1-65647RH-Q Features

* 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day

* Latch-up Free

* LET Threshold >250 MEV/mg/cm2

* Low Standby Supply Current 10mA (Max)

* Low Operatin