HS1-6617RH-T Datasheet (Intersil Corporation) - Radiation Hardened 2K x 8 CMOS PROM

HS1-6617RH-T, Radiation Hardened 2K x 8 CMOS PROM

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HS-6617RH-T Data Sheet July 1999 File Number 4608.1 Radiation Hardened 2K x 8 CMOS PROM Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose.

These QML Class T devices are processed to a standard ﬂow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability.

The Intersil HS-6617RH-T is a radiation hardened 16k CMOS PROM, organized in a 2K word by 8-bit forma

HS1-6617RH-T Features

* QML Class T, Per MIL-PRF-38535

* Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEU LET 16MeV/mg/cm2 - SEL LET 100MeV/mg/cm2

* Field Programmable Nicrome Fuse Links

* Low Standby Power 1.1mW Max

* Low Operating Power 137.5mW/MHz Max

* Fast