RFK25N18 Datasheet - Intersil Corporation

RFK25N18 N-Channel Power MOSFET

only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliab.

RFK25N18, RFK25N20 Data Sheet October 1998 File Number 1500.3 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type.

RFK25N18 Features

* 25A, 180V and 200V

* rDS(ON) = 0.150Ω Symbol D G Ordering Information PART NUMBER RFK25N18 RFK25N20 PACKAGE TO-204AE TO-204AE BRAND RFK25N18 RFK25N20 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAU

RFK25N18_IntersilCorporation.pdf