RFV10N50BE

10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Intersil Corporation

RFV10N50BE Features

* 10A, 500V

* rDS(ON) = 0.480Ω

* Very Fast Turn-Off Characteristics

* Nanosecond Switching Speeds

* Electrostatic Discharge Protected

* UIS Rating Curve

* SOA is Power Dissipation Limited

* High Input Impedance Description The RFV10N50

RFV10N50BE General Description

The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol t.

RFV10N50BE Datasheet (66.37 KB)

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Datasheet Details

Part number:

RFV10N50BE

Manufacturer:

Intersil Corporation

File Size:

66.37 KB

Description:

10a/ 500v/ fast switching n-channel enhancement-mode power mosfets.
S E M I C O N D U C T O R RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs Package JEDEC STYLE 5 LEAD TO-247 August 199.

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RFV10N50BE 10A 500V Fast Switching N-Channel Enhancement-Mode Power MOSFETs Intersil Corporation

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RFV10N50BE Features

RFV10N50BE General Description

Datasheet Details

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