RFW2N06RLE 2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET

Intersil Corporation

Description

RFW2N06RLE Data Sheet July 1999 File Number 2838.3 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET The RFW2N06RLE N-Channel, logic level, ESD.
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Datasheet Specifications

Part number: RFW2N06RLE
Manufacturer: Intersil Corporation
File Size: 41.54 KB
Datasheet: RFW2N06RLE_IntersilCorporation.pdf
Description: 2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET

Features

* 2A, 60V
* rDS(on) = 0.160Ω
* UIS Rating Curve (Single Pulse)
* Design Optimized For 5 Volt Gate Drive
* Can be Driven Directly from CMOS, NMOS, TTL Circuits
* Compatible with Automotive Drive Requirements
* SOA is Power Dissipation Limited

Applications

* such as programmable controllers, automotive switching, switching regulators, switching converters, motor and relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3

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RFW2N06RLE 60V 0.160 Ohm Logic Level N-Channel Power MOSFET Intersil Corporation

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