CA3127 Description
The CA3127 consists of five general purpose silicon NPN transistors on a mon monolithic substrate. Each of the pletely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility.
CA3127 Key Features
- Gain Bandwidth Product (fT)
- Power Gain
- 30dB (Typ) at 100MHz
- Noise Figure
- 3.5dB (Typ) at 100MHz
- Five Independent Transistors on a mon Substrate