CA3127 Datasheet | Intersil

Description The CA3127 consists of five general purpose silicon NPN transistors on a mon monolithic substrate. Each of the pletely isolated transistors exhibits low 1/f noise and a value of f T in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. Features - Gain Bandwidth Product (f T)- - - . >1GHz - Power Gain - - - . . 30d B (Typ) at 100MHz - Noise Figure - - - . 3.5d B (Typ) at 100MHz - Five Independent Transistors on a mon Substrate Applications - VHF Amplifiers - Multifunction binations - RF/Mixer/Oscillator - Sense Amplifiers - Synchronous Detectors - VHF Mixers Ordering Information PART NUMBER (BRAND) CA3127E TEMP. RANGE (o C) -55 to 125 -55 to 125 PKG. NO. E16.3 M16.15 PACKAGE 16 Ld PDIP 16 Ld SOIC - IF Converter - IF Amplifiers - Synthesizers - Cascade Amplifiers CA3127M (3127) CA3127M96 (3127) -55 to 125 16 Ld SOIC Tape and Reel M16.15 Pinout CA3127 (PDIP, SOIC) TOP VIEW 1 2 Q2 3 4 Q1 16 15 14 13 Q5 12 11 SUBSTRATE 5 6 Q3 7 8 Q4 10 9 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File...