D4N06L Datasheet - Intersil

D4N06L RFD4N06L

only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliab.

RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate b.

D4N06L Features

* 4A, 60V

* rDS(ON) = 0.600Ω

* Design Optimized for 5 Volt Gate Drive

* Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits

* SOA is Power Dissipation Limited

* 175oC Rated Junction Temperature

* Logic Level Gate

* High Input Impe

D4N06L Datasheet (61.44 KB)

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Datasheet Details

Part number:

D4N06L

Manufacturer:

Intersil

File Size:

61.44 KB

Description:

Rfd4n06l.

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