FRF250H - N-Channel Power MOSFET

Intersil

FRF250H Datasheet Preview — Preview of FRF250H PDF

Datasheet Details

Part number	FRF250H
Manufacturer	Intersil
File Size	49.37 KB
Description	N-Channel Power MOSFET
Datasheet	FRF250H_IntersilCorporation.pdf

FRF250H Product details

Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

23A, 200V, RDS(on) = 0.115Ω.
Second Generation Rad Hard MOSFET Results From New Design Concepts.
Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 12.0nA Per-RAD(Si)/sec Typically Pre-RAD Speciﬁcations for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
Gamma Dot.

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Published: Apr 23, 2005 |