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FRK9160H

P-Channel Power MOSFET

FRK9160H Features

* 40A, -100V, RDS(on) = 0.085Ω

* Second Generation Rad Hard MOSFET Results From New Design Concepts

* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/se

FRK9160H General Description

The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardne.

FRK9160H Datasheet (48.08 KB)

Preview of FRK9160H PDF

Datasheet Details

Part number:

FRK9160H

Manufacturer:

Intersil

File Size:

48.08 KB

Description:

P-channel power mosfet.

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TAGS

FRK9160H P-Channel Power MOSFET Intersil

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