FRS430H 3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs

Intersil

Description

FRS430D, FRS430R, FRS430H June 1998 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-257AA .
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from.

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Datasheet Specifications

Part number: FRS430H
Manufacturer: Intersil
File Size: 49.43 KB
Datasheet: FRS430H_IntersilCorporation.pdf
Description: 3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs

Features

* 3A, 500V, RDS(on) = 2.52Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec a

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FRS430H 500V 2.52 Ohm Rad Hard N-Channel Power MOSFETs Intersil

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