FRS430H

3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs

Intersil

FRS430H Features

* 3A, 500V, RDS(on) = 2.52Ω

* Second Generation Rad Hard MOSFET Results From New Design Concepts

* Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec a

FRS430H General Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rang.

FRS430H Datasheet (49.43 KB)

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Datasheet Details

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FRS430H

Manufacturer:

Intersil

File Size:

49.43 KB

Description:

3a/ 500v/ 2.52 ohm/ rad hard/ n-channel power mosfets.

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FRS430H 500V 2.52 Ohm Rad Hard N-Channel Power MOSFETs Intersil

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FRS430H Features

FRS430H General Description

Datasheet Details

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