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HS1-6617RH-T Radiation Hardened 2K x 8 CMOS PROM

HS1-6617RH-T Description

HS-6617RH-T Data Sheet July 1999 File Number 4608.1 Radiation Hardened 2K x 8 CMOS PROM Intersil’s Satellite Applications FlowTM (SAF) devices are fu.
only.

HS1-6617RH-T Features

* QML Class T, Per MIL-PRF-38535
* Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEU LET 16MeV/mg/cm2 - SEL LET 100MeV/mg/cm2
* Field Programmable Nicrome Fuse Links
* Low Standby Power 1.1mW Max
* Low Operating Power 137.5mW/MHz Max
* Fast

HS1-6617RH-T Applications

* FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil HS-6617RH-T

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Datasheet Details

Part number
HS1-6617RH-T
Manufacturer
Intersil Corporation
File Size
94.36 KB
Datasheet
HS1-6617RH-T_IntersilCorporation.pdf
Description
Radiation Hardened 2K x 8 CMOS PROM

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Radiation Hardened CMOS PROM Intersil Corporation
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