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RTAN140X SERIES
TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
FEATURE
Built-in bias resistor (R1=10kΩ) Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage.
VCE(sat)=10mV(TYP.)(@IC=10mA/IB=0.5mA) Low on Resistance
Ron=0.94Ω(TYP.)(@VI=7V)
APPLICATION
muting circuit , switching circuit
OUTLINE DRAWING
RTAN140T2 (PRELIMINARY)
0.2 0.8 0.2
Unit:mm
RTAN140M
2.1 0.425 1.25
0.425
0.25 2.0 1.3 0.65 0.65
0.3
① ②③
① ②③
1.2 0.8 0.4 0.4
0.9 0.7 0~0.1 0.15
0.5
EQUIVALENT CIRCUIT
R1 B (IN)
C (OUT)
E
(GND)
JEITA, JEDEC:- ISAHAYA:T-USM TERMINAL CONNECTOR
①:BASE ②:EMITTER ③:COLLECTOR
RTAN140U
1.6 0.4 0.8 0.4
①
②③
JEITA:SC-70 JEDEC:- TERMINAL CONNECTOR
①:BASE ②:EMITTER ③:COLLECTOR
RTAN140C
2.5 0.5 1.