CJP05N60 - N-Channel MOSFET

JCET

CJP05N60 Datasheet Preview — Preview of CJP05N60 PDF

Datasheet Details

Part number	CJP05N60
Manufacturer	JCET
File Size	536.34 KB
Description	N-Channel MOSFET
Datasheet	CJP05N60-JCET.pdf

CJP05N60 Product details

Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode with fast recovery time.Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.

Features

z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 2.Drain TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation (note2,Ta=25℃) Maximum Power Dissipation (note3,Tc=25℃) Thermal Resistance from Junction to Ambient Junction Temperature Storage Tem.

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Published: Dec 26, 2016 |