CJP05N60

N-Channel MOSFET

JCET

CJP05N60 Features

* z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 2.Drain TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Dra

CJP05N60 General Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters.

CJP05N60 Datasheet (536.34 KB)

CJP05N60 Datasheet Preview — Preview of CJP05N60 PDF

Datasheet Details

Part number:

CJP05N60

Manufacturer:

JCET

File Size:

536.34 KB

Description:

N-channel mosfet.

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CJP05N60 N-Channel MOSFET JCET

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CJP05N60 Features

CJP05N60 General Description

Datasheet Details

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Description:

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