CJP05N60 Datasheet - JCET

CJP05N60 N-Channel MOSFET

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters.

CJP05N60 Features

* z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 2.Drain TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Dra

CJP05N60 Datasheet (536.34 KB)