Datasheet Details
| Part number | CJT04N15 |
|---|---|
| Manufacturer | JCET |
| File Size | 831.29 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 CJT04N15-JCET.pdf
|
| Part number | CJT04N15 |
|---|---|
| Manufacturer | JCET |
| File Size | 831.29 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
CJT04N15-JCET.pdf
|
This CJT04N15 use advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.SOT-223 1. GATE 2. DRAIN 3. SOURCE 12 3 FEATURE z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Excellent package for good heat dissipation MARKING T04N15 151 T04N15= Device code 151 =Code EQUIVALENT CIRCUIT Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Sourc
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