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CJU30N10 N-Channel Power MOSFET

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Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU30N10 N-Channel Power MOSFET V(BR)DSS 100V RDS(on)MAX .
This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

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Datasheet Specifications

Part number
CJU30N10
Manufacturer
JCET
File Size
830.16 KB
Datasheet
CJU30N10-JCET.pdf
Description
N-Channel Power MOSFET

Features

* High density cell design for ultra low RDS(on)
* Special process technology for high ESD capability
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation

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