* z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATIONS z Power switching application z Hard sw
CJU50N03
JCET
1.20 MB
N-channel power mosfet.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU50N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX .
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