* 1. GATE 2. DRAIN 3. SOURCE z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Excellent package for good heat dissipation z Special process technology for high ESD capability z Good stability and uniformity with high EAS APPLICATIONS z Power s
CJU80N03 Datasheet (802.23 KB)
CJU80N03
JCET
802.23 KB
N-channel power mosfet.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU80N03
V(BR)DSS
30V
N-Channel Power MOSFET
RDS(on)MAX
6.
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