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CJ3407 MOSFETS

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Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor Gener.
The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge.

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Datasheet Specifications

Part number
CJ3407
Manufacturer
JCST
File Size
172.54 KB
Datasheet
CJ3407-JCST.pdf
Description
MOSFETS

Applications

* MARKING: 3407 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID PD

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