PF10N60 - CJPF10N60

Product Overview

JIANGSU CHANGJIANG

Datasheet Details

Part number	PF10N60
Manufacturer	JIANGSU CHANGJIANG
File Size	559.76 KB
Description	CJPF10N60
Datasheet	PF10N60 Datasheet
Additional preview pages of the PF10N60 datasheet.

Product details

Description

The C JP10N60/CJPF10N60 is a high volt age and high current power MOSFET , design ed to ha ve c haracteristics, such as fast switching time, low gate charge, lo w on-st ate resist ance and have rugged avalanche characteristics.

Features

z Low Crss z Fast Switching z 100% avalanche tested 2.Drain TO-220-3L/TO-220F 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID 10 PD 2 RθJA 62.5 TJ Tstg -50 150 ~+150 Value 600 V ±30 A W ℃/W ℃ Unit C,Mar,2014 http://www. Datasheet4U. com Electrical charact.

📁 Similar Datasheet

PF10 - SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES (EDI)
PF100 - SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES (EDI)
PF1000A - PFHC module 500W/ 1000W (DENSEI-LAMBDA)
PF1000A-360 - PFHC module 500W/ 1000W (DENSEI-LAMBDA)
PF10048-A - LCD_Module (POWERTIP)
PF1005UDF16B - TVS Diode (KEC semiconductor)
PF1005UDF8B - ESD/EMI Filter (KEC)
PF1008N - DIODE MODULE (Nihon Inter Electronics)

Other Datasheets by JIANGSU CHANGJIANG

Published: May 8, 2014 |