G170N06A Datasheet, Mosfet, JIEJIE

G170N06A Features

• Mosfet
• 60V,40A RDS(ON) <15mΩ @ VGS = 10V RDS(ON) <21mΩ @ VGS = 4.5V
• Advanced Trench Technology
• Provide Excellent RDS(ON) and Low Gate Charge
• Lead free p

PDF File Details

Part number:

G170N06A

Manufacturer:

JIEJIE

File Size:

289.68kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. JMT N-channel Enhancement Mode Power MOSFET Features

60V,40A RDS(ON) <15mΩ @ VGS = 10V RDS(ON) <21mΩ @ VGS = 4.5V

TAGS

G170N06A

JIEJIE

📁 Related Datasheet

G170EG01-V0 - LCD Module (AUO)
..net Avnet Embedded. Support Around The Board™ Avnet Embedded Specification. Datasheet AUO G170EG01-V0 .avnet-embedded.eu .D.

G170EG01-V1 - SXGA Color TFT-LCD (AUO)
..net Product Specification AU OPTRONICS CORPORATION G170EG01 V1 ( V ) Preliminary Specification ( ) Final Specification Module Model.

G170EG01-V104 - TFT LCD (AUO)
Global LCD Panel Exchange Center .panelook. Product Specification G170EG01 V104 ˎPreliminary Specification ˍFinal Specification Module Mode.

G170ETN01.0 - SXGA Color TFT-LCD (AUO)
Global LCD Panel Exchange Center .panelook. Product Specification AU OPTRONICS CORPORATION Ϯʳ Preliminary Specification ϭʳ Final Specificatio.

G170ETN02.0 - SXGA Color TFT-LCD Module (AUO)
((MMV)oo)PddFreuielnlleNaimal mSinpeaercyifSicpFaetocioirfn1Gic7D1a.7t0i0A”oESnTTXAAPNGUA0rUA2OoM.P0COdT2oROu0lOoC1NcrDIT7tCoUFS1SnTC1-LpOfLi0RCedIP6D.

G170ETN02.1 - SXGA Color TFT-LCD Module (AUO)
((MMV)oo)PddFreuielnlleNaimal mSinpeaercyifSicpFaetocioirfn1Gic7D1a.7t0i0A”oESnTTXAAPNGUA0rUA2OoM.P1COdT2oROu0lOoC1NcrDIT7tCoUFS1SnTC1-LpOfLi0RCedIP6D.

G170J1-LE1 - TFT LCD Module (INNOLUX)
PRODUCT SPECIFICATION □ Tentative Specification □ Preliminary Specification ■ Approval Specification MODEL NO.: G170J1 SUFFIX: LE1 Customer: APPRO.

G170P03 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G170P03D3 P-Channel Enhancement Mode Power MOSFET Description The G170P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate .

G170P03D3 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G170P03D3 P-Channel Enhancement Mode Power MOSFET Description The G170P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate .

G170P06 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G170P06S P-Channel Enhancement Mode Power MOSFET Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate ch.