G170N06A
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
- 60V,40A RDS(ON) <15mΩ @ VGS = 10V RDS(ON) <21mΩ @ VGS = 4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead free product is acquired
Application
- Load Switch
- PWM Application
- Power management
100% UIS TESTED! 100% ΔVds TESTED!
PDFN5x6-8L
Marking and pin Assignment
Schematic Diagram
Device Marking
Device
OUTLINE
JMTG170N06A TAPING
Device Package PDFN5x6-8L
Reel Size
13inch
Reel (PCS)
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol VDSS VGSS
IDM EAS PD RθJC TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25℃ TC = 100℃
Pulsed Drain Current note1
Single Pulsed Avalanche Energy note2
Power Dissipation
TC = 25℃
Thermal Resistance, Junction to Case
Operating and Storage Temperature...
