SPE05M50T-C Datasheet - JILIN SINO

SPE05M50T-C Intelligent Power Module

GND IC Common Supply Ground U Bias Voltage for U-Phase High-Side MOSFET Driving U Bias Voltage for U-Phase IC and Low-Side MOSFET Driving U Signal Input for U-Phase High-Side U Signal Input for U-Phase Low-Side No Connection V Bias Voltage for V-Phase High Side MOSFET Driving V Bias Voltage.

SPE05M50T-C Features

* Signal high level valid, compatible with 3.3v and 5V MCU

* Lower arm MOSFET source electrode output

* Built-in bootstrap diode

* Built-in straight through protection

* Built-in undervoltage protection

* Temperature detection: negative temperature coefficient thermistor dete

SPE05M50T-C Datasheet (1.24 MB)