HF4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.0 A 2.5 Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VG
Datasheet Details
Part number:
HF4N65
Manufacturer:
JINGJIAZHEN
File Size:
1.80 MB
Description:
650v n-channel mosfet.