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HF4N65 Datasheet - JINGJIAZHEN

HF4N65 650V N-Channel MOSFET

HF4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.0 A 2.5 Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VG.

HF4N65-JINGJIAZHEN.pdf

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Datasheet Details

Part number:

HF4N65

Manufacturer:

JINGJIAZHEN

File Size:

1.80 MB

Description:

650v n-channel mosfet.

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HF4N65 HF4N65 650V N-Channel MOSFET JINGJIAZHEN

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