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Silicon Epitaxial Planar Switching Diode
MMBD2835, MMBD2836
Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
Applications • Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage
Forward Current Power Dissipation Junction Temperature Storage Temperature Range
3
12
Marking Code: A1 SOT-23 Plastic Package
MMBD2835 MMBD2836
Symbol
VR
IF Ptot Tj Tstg
Value
35 75 100 350 150 - 55 to + 150
Unit
V
mA mW OC OC
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA
Reverse Current at VR = 30 V at VR = 50 V
Reverse Breakdown Voltage at IR = 100 µA
Diode Capacitance at VR = 0 , f = 1 MHz
Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA
Sym
MMBD2835 Datasheet
