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MMBD2835 - Silicon Epitaxial Planar Switching Diode

MMBD2835 Description

Silicon Epitaxial Planar Switching Diode MMBD2835, MMBD2836 .

MMBD2835 Features

* Small package
* Low forward voltage
* Fast reverse recovery time

MMBD2835 Applications

* Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Range 3 12 Marking Code: A1 SOT-23 Plastic Package MMBD2835 MMBD2836 Symbol VR IF Ptot Tj Tstg Value 35 75

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Datasheet Details

Part number
MMBD2835
Manufacturer
JR
File Size
379.57 KB
Datasheet
MMBD2835-JR.pdf
Description
Silicon Epitaxial Planar Switching Diode

📁 Related Datasheet

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  • MMBD2836LT1 - Monolithic Dual Switching Diodes (Motorola)
  • MMBD2837 - Surface Mount Switching Diode (LGE)
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  • MMBD2837LT1G - Monolithic Dual Switching Diodes (onsemi)
  • MMBD2838 - Small Signal Diode (Kexin)

📌 All Tags

Silicon Epitaxial Planar Switching Diode JR
JR MMBD2835-like datasheet