34FLZ-RSM1-R-TB Datasheet, Connector, JST

34FLZ-RSM1-R-TB Features

  • Connector
      –
      –
      –
      –
      –
      –
      –
      –
      –
      –
      

PDF File Details

Part number:

34FLZ-RSM1-R-TB

Manufacturer:

JST

File Size:

124.26kb

Download:

📄 Datasheet

Description:

Connector.

Datasheet Preview: 34FLZ-RSM1-R-TB 📥 Download PDF (124.26kb)
Page 2 of 34FLZ-RSM1-R-TB Page 3 of 34FLZ-RSM1-R-TB

TAGS

34FLZ-RSM1-R-TB
CONNECTOR
JST

📁 Related Datasheet

34FLZ-RSM2-R-TB - CONNECTOR (JST)
FLZ CONNECTOR 0.5mm pitch/Connectors for FFC and FPC Emboss Tape This extremely small 0.5 mm pitch connector with a height of only 2.0 mm above the .

34FLZ-SM1-R-TB - CONNECTOR (JST)
0.5mm (.020 ) pitch FLZ CONNECTOR Connectors for FFC and FPC Emboss Tape Features –––––––––––––––––––––––– This extremely small 0.5mm (.020 ) pitc.

34FLZ-SM2-R-TB - CONNECTOR (JST)
FLZ CONNECTOR 0.5mm pitch/Connectors for FFC and FPC Emboss Tape This extremely small 0.5 mm pitch connector with a height of only 2.0 mm above the .

3400 - 5-Series Chipset (Intel)
Intel® 5 Series Chipset and Intel® 3400 Series Chipset Datasheet January 2012 Document Number: 322169-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN.

3400 - N-Channel MOSFET (GOFORD)
GOFORD DESCRIPTION The 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as .

3400 - N-Channel MOSFET (Doingter)
Description: This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w.

3401 - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

3401 - P-Channel MOSFET (CXW)
 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  Thi.

3401 - P-channel-enhanced MOS field-effect transistor (ChipSourceTek)
3401 RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP P MOS 1   SOT-23 D Drain D 3 k 1 2 e G S .

3401 - MOSFET (GFD)
3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2..

Stock and price

JST Manufacturing
CONN FFC BOTTOM 34POS 0.5MM R/A
DigiKey
34FLZ-RSM1-R-TB
0 In Stock
Qty : 2000 units
Unit Price : $0.75
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts