S9013M
DESCRIPTION
NPN Epitaxial Silicon Transistor FEATURES
High Collector Current. (IC=500m A) plementary to S9012M Excellent h FE linearity. APPLICATION 150m W Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) MARKING: J3 C
1. BASE 2. EMITTER 3. COLLECTOR
B C C BACK
J3
B E MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Parameter Value 40 25 5 500 150 150 -55-150 Units V V V m A m W ℃ ℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation...
