2SD2901 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD2901
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 900V (Min) ·High Switching Speed ·Minimum L.
RX2C - Transistor
(GME)
Actions Semiconductor Co., Ltd. 5-Function Remote Controller TX2C ATS302T/RX2C ATS302R
Actions Semiconductor Co., Ltd.
TX2C ATS302T/RX2C ATS302R D.
2SD2908 - NPN EPITAXIAL SILICON TRANSISTOR
(WEJ)
RoHS 2SD2908
2SD2908 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM: 5 A Collector-base voltage
O.
2SD2908 - Transistor
(Bruckewell)
2SD2908
Low VCE(sat) transistor(80V,0.7A)
Features • Low VCE(sat). • Excellent DC current gain characteristics. • Complements the 2SB1386 • RoHS pl.
2SD291 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD291
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 40V(Min) ·Collector Po.
2SD297 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD297
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 80V(Min) ·Collector Po.