K596 Datasheet | Jiangsu Changjiang Electronics

.. JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO- 92S 1.SOURCE Si N-CHANNEL JUNCTION FET Features Power dissipation PCM: 0.1W£¨ Tamb=25¡æ£© Gate Current I G: 10mA Drain current I D : 1mA Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Gate-Drain breakdown Voltage Gate-Source cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Symbol 2.GATE 3.DRAIN 123 unless otherwise specified£© MIN -20 -0.6 100 0.4 1.2 3.5 -1.5 800 TYP MAX UNIT V V ¦Ì A mS pF Test conditions IG= -100¦Ì A...