* Power dissipation PCM: 0.1W£¨ Tamb=25¡æ£© Gate Current I G: 10mA Drain current I D : 1mA Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Gate-Drain breakdown Voltage Gate-Source cut-off V
K596
Jiangsu Changjiang Electronics
665.04 KB
Si n-channel junction fet.
www.DataSheet4U.com
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO- 92S
1.SOURCE
K596
Si N-CHANNEL J.
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