HBR10200

SCHOTTKY BARRIER DIODE

Jilin Sino

HBR10200 Features

* zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection，High reliability zRoHS product TO-22OHF TO-22OF ORDER MESSAGE Order codes Marking Package HBR10200C HBR10200 TO-220C HBR10200CR HBR10200 TO-220C HB

HBR10200 General Description

of Changes 2010-03-05 200911G 201003H Added TO-220HF. (Rev.)：201003H 7/7 .

HBR10200 Datasheet (403.38 KB)

HBR10200 Datasheet Preview — Preview of HBR10200 PDF

Datasheet Details

Part number:

HBR10200

Manufacturer:

Jilin Sino

File Size:

403.38 KB

Description:

Schottky barrier diode.
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.

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Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv.

HBR10200C - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.

HBR10200CR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.

HBR10200CT - Schottky Barrier Rectifier (Inchange Semiconductor)
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv.

HBR10200F - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.

HBR10200FR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.

HBR10200HF - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.

HBR10200HFR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.

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HBR10200 SCHOTTKY BARRIER DIODE Jilin Sino

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HBR10200 Features

HBR10200 General Description

Datasheet Details

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HBR10200 Distributor