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AO3401 - 30V P-Channel MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions AO3401 D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±12 Continuous.

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Datasheet Details

Part number AO3401
Manufacturer JinYu
File Size 1.40 MB
Description 30V P-Channel MOSFET
Datasheet download datasheet AO3401 Datasheet

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Full PDF Text Transcription (Reference)

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30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1.0A < 120mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions AO3401 D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±12 Continuous Drain Current ID -4.2 Pulsed Drain Current Maximum Power Dissipation TA = 25oC TA = 75oC IDM PD -30 1.