* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions AO3401 D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF.
AO3401
JinYu
1.40 MB
30v p-channel mosfet.
30V P-Channel Enhancement Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1..
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