Datasheet4U Logo Datasheet4U.com

BU202DL Bipolar Junction Transistor

BU202DL Description

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.BU202DL Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1．APPLICATION Mainly us.

BU202DL Features

* Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-92 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base

📥 Download Datasheet

Preview of BU202DL PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
BU202DL
Manufacturer
Jingdao
File Size
111.04 KB
Datasheet
BU202DL-Jingdao.pdf
Description
Bipolar Junction Transistor

📁 Related Datasheet

  • BU2006 - (BU2006 - BU2010) Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU2006-E3 - Bridge Rectifiers (Vishay)
  • BU2008 - (BU2006 - BU2010) Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU2008-E3 - Bridge Rectifiers (Vishay)
  • BU2010 - (BU2006 - BU2010) Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU2010-E3 - Bridge Rectifiers (Vishay)
  • BU204 - Silicon NPN Transistor (Toshiba)
  • BU2040 - Serial I/O Expander (Rohm)

📌 All Tags

Bipolar Junction Transistor Jingdao
Jingdao BU202DL-like datasheet