BU5027A Datasheet, transistor equivalent, Jingdao

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BU5027AF - Bipolar Junction Transistor (Jingdao)
R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU5027AF Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided po.

BU5027S - Bipolar Junction Transistor (Jingdao)
R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU5027S Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided pow.

BU500 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCEX= 1500V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 4.5A ·Min.

BU505 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor BU505 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switc.

BU505D - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BU505D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lo.

BU505DF - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Built-in Damper Di.

BU505F - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot.

BU506 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BU506 DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance .

BU506A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and rel.

BU506D - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BU506D DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance.