* High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE TO-92 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 VD 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE
DBU103T
Jingdao
108.32 KB
Bipolar junction transistor.
R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
DBU103T
Bipolar Junction Transistor
*Si NPN
*RoHS COMPLIANT
1．APPLICATION
Fluoresce.
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