KT1151 - Microwave Low Noise SiGe Heterojunction Bipolar Transistor
The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band.
It has advantages such as low noise figure, high power gain, high voltage, broad dynamic range and good linearity.
It can be applied in low noise high gain amplifier
KT1151 Features
* h Operation Voltage: 10 V h Operating Temperature:
* 55℃ to +85℃ h Low Noise figure and High Gain NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz h High Power Gain Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz h Cost Effective 3-lead SOT23, 3-lead SOT323, 4- lead SOT143 package types Applica
