KX105 Datasheet (KCB) - GaN HEMT Transistor

KX105, GaN HEMT Transistor

The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications.

This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher satur

KX105 Features

* High Small Signal Gain: 15 dB @ 4 GHz.

* High Output Power: 15W PSAT.

* High Breakdown Voltage, Efficiency and Temperature Operation. APPLICATIONS

* Microwave Radios

* Military Radios

* VSAT

* Telecom Infrastructure

* Test Equipment