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KX105 Datasheet, transistor equivalent, KCB

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Part number: KX105

Manufacturer: KCB

File Size: 494.25KB

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Description: GaN HEMT Transistor

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PDF File Details

Part number: KX105

Manufacturer: KCB

File Size: 494.25KB

Download: 📄 Datasheet

Description: GaN HEMT Transistor

KX105 Features and benefits

 High Small Signal Gain: 15 dB @ 4 GHz.  High Output Power: 15W PSAT.  High Breakdown Voltage, Efficiency and Temperature Operation. APPLICATIONS  Microwave Radios  .

KX105 Application

This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage,.

KX105 Description

The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties compared to silicon or gallium arsenide.

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TAGS

KX105
GaN
HEMT
Transistor
KCB

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