Datasheet Specifications
- Part number
- 4D5N60F
- Manufacturer
- KEC
- File Size
- 492.23 KB
- Datasheet
- 4D5N60F-KEC.pdf
- Description
- KHB4D5N60F
Description
SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .Features
* VDSS(Min. )= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ. ) =17nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D5N60P KHB4D5N60F Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (N4D5N60F Distributors
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