KF17N50N N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number: KF17N50N
Manufacturer: KEC
File Size: 84.41 KB
Datasheet: KF17N50N_KEC.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS(Min. )= 500V, ID= 17A Drain-Source ON Resistance : RDS(ON)=0.35(Max. ) Qg(typ. ) =41nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25¡É Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak D

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KF17N50N N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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