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KF17N50N Datasheet - KEC

KF17N50N N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KF17N50N Features

* VDSS(Min.)= 500V, ID= 17A Drain-Source ON Resistance : RDS(ON)=0.35(Max.) Qg(typ.) =41nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25¡É Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak D

KF17N50N_KEC.pdf

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Datasheet Details

Part number:

KF17N50N

Manufacturer:

KEC

File Size:

84.41 KB

Description:

N-channel mos field effect transistor.

KF17N50N Distributor

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KF17N50N KF17N50N N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC