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KF2N60I, KF2N60D N-Channel MOSFET

KF2N60I Description

SEMICONDUCTOR TECHNICAL DATA KF2N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

KF2N60I Features

* VDSS= 600V, ID= 2.0A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Dio

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: KF2N60I, KF2N60D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
KF2N60I, KF2N60D
Manufacturer
KEC
File Size
384.04 KB
Datasheet
KF2N60D-KEC.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: KF2N60I, KF2N60D.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET KEC
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