Part number:
KF2N60I
Manufacturer:
KEC
File Size:
384.04 KB
Description:
N channel mos field effect transistor.
* VDSS= 600V, ID= 2.0A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Dio
KF2N60I
KEC
384.04 KB
N channel mos field effect transistor.
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