KF5N50DS Features
* VDSS= 500V, ID= 4.3A Drain-Source ON Resistance : RDS(ON)=1.4 (Max) @VGS = 10V Qg(typ) = 12nC trr(typ) = 150ns H G F F KF5N50DR/DS N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10
Datasheet Details
KF5N50DS, KF5N50DR
KEC
126.17 KB
N channel mos field effect transistor.
This datasheet PDF includes multiple part numbers: KF5N50DS, KF5N50DR.
Please refer to the document for exact specifications by model.
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