KF5N50FZA Features
* VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC trr(typ) = 150ns (KF5N50FSA) trr(typ) = 300ns (KF5N50FZA) @VGS = 10V KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current
Datasheet Details
KF5N50FZA, KF5N50FSA
KEC
779.11 KB
N channel mos field effect transistor.
This datasheet PDF includes multiple part numbers: KF5N50FZA, KF5N50FSA.
Please refer to the document for exact specifications by model.
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