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KF80N08P N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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Description

SEMICONDUCTOR TECHNICAL DATA KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDS.

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Datasheet Specifications

Part number
KF80N08P
Manufacturer
KEC
File Size
428.57 KB
Datasheet
KF80N08P-KEC.pdf
Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS= 75V, ID= 80A Drain-Source ON Resistance : RDS(ON)=10m (Max. ) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF80N08P KF80N08F Drain-Source Voltage VDSS 75 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2)

KF80N08P Distributors

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