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KMB010P30QA - P-Channel Trench MOSFET

KMB010P30QA Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristisc.

KMB010P30QA Features

* VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max. ) @ VGS=-10V RDS(ON)=28m (Max. ) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage Gate Source Voltage Drain Current VDSS -30 V

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Datasheet Details

Part number
KMB010P30QA
Manufacturer
KEC
File Size
734.05 KB
Datasheet
KMB010P30QA-KEC.pdf
Description
P-Channel Trench MOSFET

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P-Channel Trench MOSFET KEC
KEC KMB010P30QA-like datasheet