Datasheet Details
- Part number
- KMB010P30QA
- Manufacturer
- KEC
- File Size
- 734.05 KB
- Datasheet
- KMB010P30QA-KEC.pdf
- Description
- P-Channel Trench MOSFET
KMB010P30QA Description
SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristisc.
KMB010P30QA Features
* VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max. ) @ VGS=-10V RDS(ON)=28m (Max. ) @ VGS=-4.5V Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain Source Voltage Gate Source Voltage
Drain Current
VDSS
-30
V
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