Datasheet4U Logo Datasheet4U.com

KMB010P30QA Datasheet - KEC

KMB010P30QA P-Channel Trench MOSFET

KMB010P30QA Features

* VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage Gate Source Voltage Drain Current VDSS -30 V

KMB010P30QA-KEC.pdf

Preview of KMB010P30QA PDF
KMB010P30QA Datasheet Preview Page 2 KMB010P30QA Datasheet Preview Page 3

Datasheet Details

Part number:

KMB010P30QA

Manufacturer:

KEC

File Size:

734.05 KB

Description:

P-channel trench mosfet.

📁 Related Datasheet

KMB012N30QA N-Channel Trench MOSFET (KEC)

KMB014P30QA Trench MOSFET (KEC)

KMB030N30D N-Channel Trench MOSFET (KEC)

KMB035N40DB N-Channel Trench MOSFET (KEC)

KMB035N40DC N-Channel Trench MOSFET (KEC)

KMB050N60P N-Channel MOSFET (KEC)

KMB050N60PA N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)

KMB054N40DA N-Channel Trench MOSFET (KEC)

TAGS

KMB010P30QA KMB010P30QA P-Channel Trench MOSFET KEC

KMB010P30QA Distributor