KMB012N30QA N-Channel Trench MOSFET

KEC

Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristisc.

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Datasheet Specifications

Part number: KMB012N30QA
Manufacturer: KEC
File Size: 801.11 KB
Datasheet: KMB012N30QA-KEC.pdf
Description: N-Channel Trench MOSFET

Features

* VDSS=30V, ID=12A. Drain to Source On Resistance. RDS(ON)=7m (Max. ) @ VGS=10V RDS(ON)=11m (Max. ) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 (Note 1) Pulsed (Note 1)

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KMB012N30QA N-Channel Trench MOSFET KEC

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