KMB012N30QA
DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack..
FEATURES
VDSS=30V, ID=12A. Drain to Source On Resistance. RDS(ON)=7m (Max.) @ VGS=10V RDS(ON)=11m (Max.) @ VGS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@Ta=25 (Note 1)
Pulsed
(Note 1)
Drain Power Dissipation @Ta=25 (Note 1)
Maximum Junction Temperature
Storage Temperature Range
VDSS VGSS
ID IDP PD Tj Tstg
30 20 12 48 2.5 150 -55~150
V V A A W
Thermal Resistance, Junction to Ambient (Note 1) Rth JA Note1) Surface Mounted on 1 1 FR4 Board, t 10sec.
/W
N-Ch Trench MOSFET
DIM MILLIMETERS
A 4.85+_ 0.2
B1 3.94+_ 0.2 B2 6.02+_ 0.3
B1 B2
D 0.4+_ 0.1 G 0.15+0.1/-0.05
H 1.63+_ 0.2 L 0.65+_...
