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KMB014P30QA - Trench MOSFET

KMB014P30QA Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB014P30QA P-Ch Trench MOSFET GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristis.

KMB014P30QA Features

* VDSS=-30V, ID=-14A. Drain-Source ON Resistance. RDS(ON)=10m (Max. ) @ VGS=-10V RDS(ON)=18m (Max. ) @ VGS=-4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current

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Datasheet Details

Part number
KMB014P30QA
Manufacturer
KEC
File Size
491.59 KB
Datasheet
KMB014P30QA_KEC.pdf
Description
Trench MOSFET

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Trench MOSFET KEC
KEC KMB014P30QA-like datasheet