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KMB014P30QA Datasheet - KEC

KMB014P30QA, Trench MOSFET

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB014P30QA P-Ch Trench MOSFET GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristis.
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KMB014P30QA_KEC.pdf

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Datasheet Details

Part number:

KMB014P30QA

Manufacturer:

KEC

File Size:

491.59 KB

Description:

Trench MOSFET

Features

* VDSS=-30V, ID=-14A. Drain-Source ON Resistance. RDS(ON)=10m (Max. ) @ VGS=-10V RDS(ON)=18m (Max. ) @ VGS=-4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current

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