KMB014P30QA
DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.
D P G H T L
FEATURES
VDSS=-30V, ID=-14A. Drain-Source ON Resistance. RDS(ON)=10m (Max.) @ VGS=-10V RDS(ON)=18m (Max.) @ VGS=-4.5V Super High Dense Cell Design
1 4 B1 B2 8 5 A
MOSFET Maximum Ratings (Ta=25
CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note :
- Surface Mounted on FR4 Board
Unless otherwise noted)
SYMBOL PATING VDSS VGSS ID- IDP IS P D- Tj Tstg Rth JA- -30 25 -14 -70 -1.7 2.5 150 -55~150 50 /W UNIT V V A A A W
DIM A B1 B2 D G H L P T
MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27...
