KMB050N60P Datasheet - KEC

KMB050N60P N-Channel MOSFET

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology and switching mode power su.

KMB050N60P Features

* VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=0.022 @VGS = 10V Qg(typ.) = 32nC Improved dv/dt capacity, high Ruggedness Maximum Junction Temperature Range (175 ) KMB050N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A

KMB050N60P-KEC.pdf