KMD6D0DN40Q Dual N-Channel MOSFET

KEC

Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

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Datasheet Specifications

Part number: KMD6D0DN40Q
Manufacturer: KEC
File Size: 369.97 KB
Datasheet: KMD6D0DN40Q-KEC.pdf
Description: Dual N-Channel MOSFET

Features

* VDSS=40V, ID=6A. Drain-Source ON Resistance. RDS(ON)=38m (Max. ) @VGS=10V RDS(ON)=50m (Max. ) @VGS=4.5V Super High Dense Cell Design Very fast switching MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage Gate Source Voltage Drain Current Ta=25 P

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KMD6D0DN40Q Dual N-Channel MOSFET KEC

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