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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES
ᴌExcellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. ᴌComplementary to KTA511T.
A F G
1 2
KTC611T
EPITAXIAL PLANAR NPN TRANSISTOR
E B 5
DIM MILLIMETERS _ 0.2 A 2.9 +
B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
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4
G
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MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg RATING 35 30 5 500 -500 0.9 150 -55ᴕ150 UNIT V V V mA mA W ᴱ ᴱ
C
L
J
J
H
1. Q 1 BASE 2.
KTC611T Datasheet
