KTD1003 EPITAXIAL PLANAR NPN TRANSISTOR

KEC

KTD1003 Description

J BL E SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION..

KTD1003 Features

* ᴌHigh DC Current Gain : hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 50 Emitter-B

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KTD1003 Datasheet Preview — Preview of KTD1003 PDF

Datasheet Details

Part number: KTD1003
Manufacturer: KEC
File Size: 73.34 KB
Datasheet: KTD1003-KEC.pdf
Description: EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR KEC

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