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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222/2222A. KTN2907/2907A Electrically Similar to 2N2907/2907A.
KTN2907/A
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2907 KTN2907A
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-40
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current Collector Power Dissipation
(Ta=25 ) Junction Temperature
IC PC Tj
-600 mA 625 mW 150
Storage Temperature Range
Tstg
-55 150
1999. 4.
KTN2907A Datasheet
