MJE13005DF - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MJE13005DF TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage
