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SJMN04A65D N-Channel Super Junction MOSFET

SJMN04A65D Description

SJMN04A65D Super Junction MOSFET N-Channel Super Junction MOSFET .

SJMN04A65D Features

* Drain-Source voltage: VDS=700V (@TJ=150C)
* Low drain-source On resistance: RDS(on)=0.83Ω (Typ. )
* Ultra low gate charge: Qg=10nC (Typ. )
* RoHS compliant device
* 100% avalanche tested Ordering Information Part Number Marking Package SJMN04A65D SJMN04A65 TO-252 D G S

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Datasheet Details

Part number
SJMN04A65D
Manufacturer
KODENSHI KOREA
File Size
425.68 KB
Datasheet
SJMN04A65D-AUK.pdf
Description
N-Channel Super Junction MOSFET

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N-Channel Super Junction MOSFET KODENSHI KOREA
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