SJMN04A65D - N-Channel Super Junction MOSFET

KODENSHI KOREA

Datasheet Details

Part number	SJMN04A65D
Manufacturer	KODENSHI KOREA
File Size	425.68 KB
Description	N-Channel Super Junction MOSFET
Datasheet	SJMN04A65D-AUK.pdf

Drain-Source voltage: VDS=700V (@TJ=150C).
Low drain-source On resistance: RDS(on)=0.83Ω (Typ. ).
Ultra low gate charge: Qg=10nC (Typ. ).
RoHS compliant device.
100% avalanche tested Ordering Information Part Number Marking Package SJMN04A65D SJMN04A65 TO-252 D G S TO-252 Marking Information SJMN 04A65 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise.

📁 SJMN04A65D Similar Datasheet

Other Datasheets by KODENSHI KOREA

Published: Feb 7, 2019 |